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dual-channel digital isolators, enhanced system-level esd reliability data sheet adum3210/adum3211 rev. e information furnished by analog devices is believed to be accurate and reliable. however, no responsibility is assumed by analog devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. specifications subject to change without notice. no license is granted by implication or otherwise under any patent or patent rights of analog devices. trademarks and registered trademarks are the property of their respective owners. one technology way, p.o. box 9106, norwood, ma 02062-9106, u.s.a. tel: 781.329.4700 www.analog.com fax: 781.461.3113 ?2007C2011 analog devices, inc. all rights reserved. features enhanced system-level esd performance per iec 61000-4-x high temperature operation: 125c default low output narrow body, rohs-compliant, 8-lead soic low power operation 5 v operation 1.7 ma per channel maximum @ 0 mbps to 2 mbps 3.7 ma per channel maximum @ 10 mbps 7.0 ma per channel maximum @ 25 mbps 3 v operation 1.5 ma per channel maximum @ 0 mbps to 2 mbps 2.5 ma per channel maximum @ 10 mbps 4.7 ma per channel maximum @ 25 mbps 3 v/5 v level translation high data rate: dc to 25 mbps (nrz) precise timing characteristics 3 ns maximum pulse-width distortion at 5 v operation 3 ns maximum channel-to-channel matching high common-mode transient immunity: >25 kv/s safety and regulatory approvals ul recognition: 2500 v rms for 1 minute per ul 1577 csa component acceptance notice #5a vde certificate of conformity din v vde v 0884-10 (vde v 0884-10): 2006-12 v iorm = 560 v peak qualified for automotive applications applications size-critical multichannel isolation spi interface/data converter isolation rs-232/rs-422/rs-485 transceiver isolation digital field bus isolation gate drive interfaces hybrid electric vehicles, battery monitor, and motor drive general description the adum3210 / adum3211 are dual-channel, digital isolators based on analog devices, inc., i coupler? technology. combining high speed cmos and monolithic transformer technology, this isolation component provides outstanding performance charac- teristics superior to alternatives such as optocoupler devices. by avoiding the use of leds and photodiodes, i coupler devices remove the design difficulties commonly associated with opto- couplers. the typical optocoupler concerns regarding uncertain current transfer ratios, nonlinear transfer functions, and temperature and lifetime effects are eliminated with the simple i coupler digital interfaces and stable performance characteristics. the need for external drivers and other discrete components is eliminated with these i coupler products. furthermore, i coupler devices consume one-tenth to one-sixth the power of optocouplers at comparable signal data rates. the adum3210 / adum3211 isolators provide two independent isolation channels in two channel configurations with data rates up to 25 mbps (see the ordering guide ). they operate with 3.3 v or 5 v supply voltages on either side, providing compatibility with lower voltage systems as well as enabling voltage translation functionality across the isolation barrier. the adum3210/ adum3211 isolators have a default output low characteristic in comparison to the adum3200 / adum3201 models that have a default output high characteristic. adum3210w and adum3211w are automotive grade versions qualified for 125c operation. in comparison to the adum120x isolator, the adum3210/ adum3211 isolators contain various circuit and layout changes providing increased capability relative to system-level iec 61000-4-x testing (esd, burst, and surge). the precise capability in these tests for either the adum120x or adum3210/adum3211 products is strongly determined by the design and layout of the users board or module. for more information, see the an-793 application note, esd/latch-up considerations with i coupler isolation products . functional block diagrams encode decode encode decode v dd1 v ia v ib g nd 1 v dd2 v oa v ob gnd 2 1 2 3 4 8 7 6 5 0 6866-001 adum3210 encode decode encode decode v dd1 v oa v ib g nd 1 v dd2 v ia v ob gnd 2 1 2 3 4 8 7 6 5 0 6866-017 adum3211 figure 1. adum3210 functional block diagram figure 2. adum3211 functional block diagram protected by u.s. patents 5,952,849; 6,873,065; and 7,075,239.
adum3210/adum3211 data sheet rev. e | page 2 of 20 table of contents features .............................................................................................. 1 applications....................................................................................... 1 general description ......................................................................... 1 functional block diagrams............................................................. 1 revision history ............................................................................... 2 specifications..................................................................................... 3 electrical characteristic s5 v, 105 operation....................... 3 electrical characteristics3 v, 105c operation ................... 4 electrical characteristicsmixed 5 v/3 v, 105c operation 5 electrical characteristicsmixed 3 v/5 v, 105c operation 6 electrical characteristics5 v, 125c operation ................... 7 electrical characteristics3 v, 125c operation ..................... 8 electrical characteristicsmixed 5 v/3 v, 125c operation 9 electrical characteristicsmixed 3 v/5 v, 125c operation ....................................................................................................... 10 package characteristics ............................................................. 11 regulatory information............................................................. 11 insulation and safety-related specifications.......................... 11 din v vde v 0884-10 (vde v 0884-10) insulation characteristics ............................................................................ 12 recommended operating conditions .................................... 12 absolute maximum ratings ......................................................... 13 esd caution................................................................................ 13 pin configurations and function descriptions ......................... 14 truth tables................................................................................. 14 typical performance characteristics ........................................... 15 applications information .............................................................. 16 pc board layout ........................................................................ 16 system-level esd considerations and enhancements ........ 16 propagation delay-related parameters................................... 16 dc correctness and magnetic field immunity........................... 16 power consumption .................................................................. 17 insulation lifetime ..................................................................... 18 outline dimensions ....................................................................... 19 ordering guide .......................................................................... 20 automotive products ................................................................. 20 revision history 11/11rev. d to rev. e changes to table 1, pulse width parameter ................................. 3 changes to table 4, pulse width parameter ................................. 4 changes to table 7, pulse width parameter ................................. 5 changes to table 10, pulse width parameter............................... 6 6/11rev. c to rev. d changes to features section, application section, and general description section .......................................................................... 1 changes to propagation delay skew parameter, table 1; opposing direction parameter, table 1; and quiescent output supply current parameter, table 3................................................. 3 changes to opposing-direction parameter, table 4 ................... 4 changes to opposing-direction parameter, table 7 and logic low input threshold parameter, table 9 ...................................... 5 changes to propagation delay skew parameter, table 10 and changes to table 12.......................................................................... 6 changes to table 13, table 14, and quiescent output supply current parameter, table 15............................................................ 7 changes to table 16 and table 17 .................................................. 8 changes to table 19, table 20, and logic low input threshold parameter, table 21 .......................................................................... 9 changes to table 22, table 23, and table 24............................... 10 changes to side 1 current parameter, table 28; side 2 current parameter, table 28; and table 29 ................................................ 12 changes to ambient operating temperature, table 30 and average output current per pin, table 30.................................. 13 changes to figure 9 caption, figure 10 caption, and figure 11 caption ............................................................................................ 15 changes to ordering guide .......................................................... 20 added automotive products section .......................................... 20 9/09rev. b to rev. c added adum3210a and adum3211a .................... throughout changes to general description section .......................................1 reformatted electrical characteristics tables ...............................3 moved truth tables section ......................................................... 14 changes to ordering guide .......................................................... 20 7/09rev. a to rev. b added adum3211........................................................ throughout changes to specifications section...................................................3 added table 16 ............................................................................... 19 added figure 5 and table 18 ........................................................ 20 added figure 11 ............................................................................. 21 changes to power consumption section.................................... 23 changes to ordering guide .......................................................... 25 9/08rev. sp0 to rev. a changes to features and general description sections ..............1 changes to specifications section...................................................3 changes to recommended operating conditions section...... 11 changes to ordering guide .......................................................... 18 7/07revision sp0: initial version
data sheet adum3210/adum3211 rev. e | page 3 of 20 specifications electrical characteristics5 v, 105 operation all typical specifications are at t a = 25c, v dd1 = v dd2 = 5 v. minimum/maximum specifications apply over the entire recommended operation range: 4.5 v v dd1 5.5 v, 4.5 v v dd2 5.5 v, and ?40c t a +105c, unless otherwise noted. switching specifications are tested with c l = 15 pf and cmos signal levels, unless otherwise noted. table 1. a grade b grade parameter symbol min typ max min typ max unit test conditions switching specifications data rate 1 10 mbps within pwd limit propagation delay t phl , t plh 20 50 20 50 ns 50% input to 50% output pulse width distortion pwd 5 3 ns |t plh ? t phl | change vs. temperature 6 5 ps/c pulse width pw within pwd limit adum3210 1000 22 ns adum3211 1000 33 ns propagation delay skew t psk 20 18 ns between any two units channel matching codirectional t pskcd 5 3 ns opposing-direction t pskod 20 18 ns output rise/fall time t r /t f 2.5 2.5 ns 10% to 90% table 2. 1 mbpsa grade, b grade 10 mbpsb grade parameter symbol min typ max min typ max unit test conditions supply current adum3210 i dd1 1.3 1.7 3.5 4.6 ma i dd2 1.0 1.6 1.7 2.8 ma adum3211 i dd1 1.1 1.5 2.6 3.4 ma i dd2 1.3 1.8 3.1 4.0 ma table 3. for all models parameter symbol min typ max unit test conditions dc specifications logic high input threshold v ih 0.7 v ddx v logic low input threshold v il 0.3 v ddx v logic high output voltages v oh v ddx ? 0.1 5.0 v i ox = ?20 a, v ix = v ixh v ddx ? 0.5 4.8 v i ox = ?4 ma, v ix = v ixh logic low output voltages v ol 0.0 0.1 v i ox = 20 a, v ix = v ixl 0.2 0.4 v i ox = 4 ma, v ix = v ixl input current per channel i i ?10 +0.01 +10 a 0 v v ix v ddx supply current per channel quiescent input supply current i ddi(q) 0.4 0.8 ma quiescent output supply current i ddo(q) 0.4 0.8 ma dynamic input supply current i ddi(d) 0.19 ma/mbps dynamic output supply current i ddo(d) 0.05 ma/mbps ac specifications common-mode transient immunity 1 |cm| 25 35 kv/s v ix = v ddx , v cm = 1000 v, transient magnitude = 800 v refresh rate f r 1.2 mbps 1 |cm| is the maximum common-mode voltage slew ra te that can be sustained while maintaining v o > 0.8 v dd . the common-mode voltage slew rates apply to both rising and falling common-mode voltage edges.
adum3210/adum3211 data sheet rev. e | page 4 of 20 electrical characteristics3 v, 105c operation all typical specifications are at t a = 25c, v dd1 = v dd2 = 3.0 v. minimum/maximum specifications apply over the entire recommended operation range: adum3210 supply voltages 2.7 v v dd1 3.6 v, 2.7 v v dd2 3.6 v; adum3211 supply voltages 3.0 v v dd1 3.6 v, 3.0 v v dd2 3.6 v, and ?40c t a +105c, unless otherwise noted. switching specifications are tested with c l = 15 pf and cmos signal levels, unless otherwise noted. table 4. a grade b grade parameter symbol min typ max min typ max unit test conditions switching specifications data rate 1 10 mbps within pwd limit propagation delay t phl , t plh 20 60 20 60 ns 50% input to 50% output pulse width distortion pwd adum3210 5 3 ns |t plh ? t phl | adum3211 6 4 ns |t plh ? t phl | change vs. temperature 6 5 ps/c pulse width pw within pwd limit adum3210 1000 22 ns adum3211 1000 33 ns propagation delay skew t psk 29 22 ns between any two units channel matching codirectional t pskcd 5 3 ns opposing-direction t pskod 29 20 ns output rise/fall time t r /t f 3.0 3.0 ns 10% to 90% table 5. 1 mbpsa grade, b grade 10 mbpsb grade parameter symbol min typ max min typ max unit test conditions supply current adum3210 i dd1 0.8 1.3 2.0 3.2 ma i dd2 0.7 1.0 1.1 1.7 ma adum3211 i dd1 0.7 1.3 1.5 2.1 ma i dd2 0.8 1.6 1.9 2.4 ma table 6. for all models parameter symbol min typ max unit test conditions dc specifications logic high input threshold v ih 0.7 v ddx v logic low input threshold v il 0.3 v ddx v logic high output voltages v oh v ddx ? 0.1 3.0 v i ox = ?20 a, v ix = v ixh v ddx ? 0.5 2.8 v i ox = ?4 ma, v ix = v ixh logic low output voltages v ol 0.0 0.1 v i ox = 20 a, v ix = v ixl 0.2 0.4 v i ox = 4 ma, v ix = v ixl input current per channel i i ?10 +0.01 +10 a 0 v v ix v ddx supply current per channel quiescent input supply current i ddi(q) 0.3 0.5 ma quiescent output supply current i ddo(q) 0.3 0.5 ma dynamic input supply current i ddi(d) 0.10 ma/mbps dynamic output supply current i ddo(d) 0.03 ma/mbps ac specifications common-mode transient immunity 1 |cm| 25 35 kv/s v ix = v ddx , v cm = 1000 v, transient magnitude = 800 v refresh rate f r 1.1 mbps 1 |cm| is the maximum common-mode voltage slew ra te that can be sustained while maintaining v o > 0.8 v dd . the common-mode voltage slew rates apply to both rising and falling common-mode voltage edges.
data sheet adum3210/adum3211 rev. e | page 5 of 20 electrical characteristicsmixed 5 v/3 v, 105c operation all typical specifications are at t a = 25c, v dd1 = 5 v, v dd2 = 3.0 v. minimum/maximum specifications apply over the entire recommended operation range: adum3210 supply voltages 4.5 v v dd1 5.5 v, 2.7 v v dd2 3.6 v; adum3211 supply voltages 4.5 v v dd1 5.5 v, 3.0 v v dd2 3.6 v, and ?40c t a +105c, unless otherwise noted. switching specifications are tested with c l = 15 pf, and cmos signal levels, unless otherwise noted. table 7. a grade b grade parameter symbol min typ max min typ max unit test conditions switching specifications data rate 1 10 mbps within pwd limit propagation delay t phl , t plh 15 55 15 55 ns 50% input to 50% output pulse width distortion pwd 5 3 ns |t plh ? t phl | change vs. temperature 6 5 ps/c pulse width pw within pwd limit adum3210 1000 22 ns adum3211 1000 33 ns propagation delay skew t psk 29 22 ns between any two units channel matching codirectional t pskcd 5 3 ns opposing-direction t pskod 29 20 ns output rise/fall time t r /t f 3.0 3.0 ns 10% to 90% table 8. parameter symbol 1 mbpsa grade, b grade 10 mbpsb grade unit test conditions min typ max min typ max supply current adum3210 i dd1 1.3 1.7 3.5 4.6 ma i dd2 0.7 1.0 1.1 1.7 ma adum3211 i dd1 1.1 1.5 2.6 3.4 ma i dd2 0.8 1.6 1.9 2.4 ma table 9. for all models parameter symbol min typ max unit test conditions dc specifications logic high input threshold v ih 0.7 v ddx v logic low input threshold v il 0.3 v ddx v logic high output voltages v oh v ddx ? 0.1 v ddx v i ox = ?20 a, v ix = v ixh v ddx ? 0.5 v ddx ? 0.2 v i ox = ?4 ma, v ix = v ixh logic low output voltages v ol 0.0 0.1 v i ox = 20 a, v ix = v ixl 0.2 0.4 v i ox = 4 ma, v ix = v ixl input current per channel i i ?10 +0.01 +10 a 0 v v ix v ddx supply current per channel quiescent input supply current i ddi(q) 0.4 0.8 ma quiescent output supply current i ddo(q) 0.3 0.5 ma dynamic input supply current i ddi(d) 0.19 ma/mbps dynamic output supply current i ddo(d) 0.03 ma/mbps ac specifications common-mode transient immunity 1 |cm| 25 35 kv/s v ix = v ddx , v cm = 1000 v, transient magnitude = 800 v refresh rate f r 1.2 mbps 1 |cm| is the maximum common-mode voltage slew ra te that can be sustained while maintaining v o > 0.8 v dd . the common-mode voltage slew rates apply to both rising and falling common-mode voltage edges.
adum3210/adum3211 data sheet rev. e | page 6 of 20 electrical characteristicsmixed 3 v/5 v, 105c operation all typical specifications are at t a = 25c, v dd1 = 3 v, v dd2 = 5.0 v. minimum/maximum specifications apply over the entire recommended operation range: adum3210 supply voltages 2.7 v v dd1 3.6 v, 4.5 v v dd2 5.5 v; adum3211 supply voltages 3.0 v v dd1 3.6 v, 4.5 v v dd2 5.5 v, and ?40c t a +105c, unless otherwise noted. switching specifications are tested with c l = 15 pf and cmos signal levels, unless otherwise noted. table 10. a grade b grade parameter symbol min typ max min typ max unit test conditions switching specifications data rate 1 10 mbps within pwd limit propagation delay t phl , t plh 15 55 15 55 ns 50% input to 50% output pulse width distortion pwd adum3210 5 3 ns |t plh ? t phl | adum3211 6 4 ns |t plh ? t phl | change vs. temperature 6 5 ps/c pulse width pw within pwd limit adum3210 1000 22 ns adum3211 1000 33 ns propagation delay skew t psk 29 20 ns between any two units channel matching codirectional t pskcd 15 3 ns opposing-direction t pskod 29 22 ns output rise/fall time t r /t f 2.5 2.5 ns 10% to 90% table 11. 1 mbpsa grade, b grade 10 mbpsb grade parameter symbol min typ max min typ max unit test conditions supply current adum3210 i dd1 0.8 1.3 2.0 3.2 ma i dd2 1.0 1.6 1.7 2.8 ma adum3211 i dd1 0.7 1.3 1.5 2.1 ma i dd2 1.3 1.8 3.1 4.0 ma table 12. for all models parameter symbol min typ max unit test conditions dc specifications logic high input threshold v ih 0.7 v ddx v logic low input threshold v il 0.3 v ddx v logic high output voltages v oh v ddx ? 0. 1 v ddx v i ox = ?20 a, v ix = v ixh v ddx ? 0.5 v ddx ? 0.2 v i ox = ?4 ma, v ix = v ixh logic low output voltages v ol 0.0 0.1 v i ox = 20 a, v ix = v ixl 0.2 0.4 v i ox = 4 ma, v ix = v ixl input current per channel i i ?10 +0.01 +10 a 0 v v ix v ddx supply current per channel quiescent input supply current i ddi(q) 0.4 0.8 ma quiescent output supply current i ddo(q) 0.5 0.8 ma dynamic input supply current i ddi(d) 0.10 ma/mbps dynamic output supply current i ddo(d) 0.05 ma/mbps ac specifications common-mode transient immunity 1 |cm| 25 35 kv/s v ix = v ddx , v cm = 1000 v, transient magnitude = 800 v refresh rate f r 1.1 mbps 1 |cm| is the maximum common-mode voltage slew ra te that can be sustained while maintaining v o > 0.8 v dd . the common-mode voltage slew rates apply to both rising and falling common-mode voltage edges.
data sheet adum3210/adum3211 rev. e | page 7 of 20 electrical characteristics5 v, 125c operation all typical specifications are at t a = 25c, v dd1 = v dd2 = 5 v. minimum/maximum specifications apply over the entire recommended operation range: 4.5 v v dd1 5.5 v, 4.5 v v dd2 5.5 v, and ?40c t a +125c, unless otherwise noted. switching specifications are tested with c l = 15 pf and cmos signal levels, unless otherwise noted. table 13. a grade b grade and t grade c grade parameter symbol min typ max min typ max min typ max unit test conditions switching specifications data rate 1 10 25 mbps within pwd limit propagation delay t phl , t plh 20 50 20 50 20 50 ns 50% input to 50% output pulse width distortion pwd 5 3 3 ns |t plh ? t phl | change vs. temperature 6 5 5 ps/c pulse width pw 1000 100 40 ns within pwd limit propagation delay skew t psk 20 18 18 ns between any two units channel matching codirectional t pskcd 5 3 3 ns opposing-direction t pskod 20 18 18 ns output rise/fall time t r /t f 2.5 2.5 2.5 ns 10% to 90% table 14. 1 mbpsa grade, b grade, and c grade 10 mbpsb grade, c grade, and t grade 25 mbpsc grade parameter symbol min typ max min typ max min typ max unit test conditions supply current adum3210 i dd1 1.3 1.7 3.5 4.6 6.6 9.0 ma i dd2 1.0 1.6 1.7 2.8 3.7 4.5 ma adum3211 i dd1 1.1 1.5 2.6 3.4 5.3 7.5 ma i dd2 1.3 1.8 3.1 4.0 5.9 8.0 ma table 15. for all models parameter symbol min typ max unit test conditions dc specifications logic high input threshold v ih 0.7 v ddx v logic low input threshold v il 0.3 v ddx v logic high output voltages v oh v ddx ? 0.1 5.0 v i ox = ?20 a, v ix = v ixh v ddx ? 0.5 4.8 v i ox = ?4 ma, v ix = v ixh logic low output voltages v ol 0.0 0.1 v i ox = 20 a, v ix = v ixl 0.2 0.4 v i ox = 4 ma, v ix = v ixl input current per channel i i ?10 +0.01 +10 a 0 v v ix v ddx supply current per channel quiescent input supply current i ddi(q) 0.4 0.8 ma quiescent output supply current i ddo(q) 0.4 0.8 ma dynamic input supply current i ddi(d) 0.19 ma/mbps dynamic output supply current i ddo(d) 0.05 ma/mbps ac specifications common-mode transient immunity 1 |cm| 25 35 kv/s v ix = v ddx , v cm = 1000 v, transient magnitude = 800 v refresh rate f r 1.2 mbps 1 |cm| is the maximum common-mode voltage slew ra te that can be sustained while maintaining v o > 0.8 v dd . the common-mode voltage slew rates apply to both rising and falling common-mode voltage edges.
adum3210/adum3211 data sheet rev. e | page 8 of 20 electrical characteristics3 v, 125c operation all typical specifications are at t a = 25c, v dd1 = v dd2 = 3.0 v. minimum/maximum specifications apply over the entire recommended operation range: 3.0 v v dd1 3.6 v, 3.0 v v dd2 3.6 v, and ?40c t a +125c, unless otherwise noted. switching specifications are tested with c l = 15 pf and cmos signal levels, unless otherwise noted. table 16. a grade b grade and t grade c grade parameter symbol min typ max min typ max min typ max unit test conditions switching specifications data rate 1 10 25 mbps within pwd limit propagation delay t phl , t plh 20 60 20 60 20 60 ns 50% input to 50% output pulse width distortion pwd 6 4 4 ns |t plh ? t phl | change vs. temperature 6 5 5 ps/c pulse width pw 1000 100 40 ns within pwd limit propagation delay skew t psk 29 22 22 ns between any two units channel matching codirectional t pskcd 5 3 3 ns opposing-direction t pskod 29 20 20 ns output rise/fall time t r /t f 3.0 3.0 3.0 ns 10% to 90% table 17. 1 mbpsa grade, b grade, and c grade 10 mbpsb grade, c grade, and t grade 25 mbpsc grade parameter symbol min typ max min typ max min typ max unit test conditions supply current adum3210 i dd1 0.8 1.3 2.0 3.2 3.9 5.5 ma i dd2 0.7 1.0 1.1 1.7 2.4 3.0 ma adum3211 i dd1 0.7 1.3 1.5 2.1 3.1 4.5 ma i dd2 0.8 1.6 1.9 2.4 3.5 5.0 ma table 18. for all models parameter symbol min typ max unit test conditions dc specifications logic high input threshold v ih 0.7 v ddx v logic low input threshold v il 0.3 v ddx v logic high output voltages v oh v ddx ? 0.1 3.0 v i ox = ?20 a, v ix = v ixh v ddx ? 0.5 2.8 v i ox = ?4 ma, v ix = v ixh logic low output voltages v ol 0.0 0.1 v i ox = 20 a, v ix = v ixl 0.2 0.4 v i ox = 4 ma, v ix = v ixl input current per channel i i ?10 +0.01 +10 a 0 v v ix v ddx supply current per channel quiescent input supply current i ddi(q) 0.3 0.5 ma quiescent output supply current i ddo(q) 0.3 0.5 ma dynamic input supply current i ddi(d) 0.10 ma/mbps dynamic output supply current i ddo(d) 0.03 ma/mbps ac specifications common-mode transient immunity 1 |cm| 25 35 kv/s v ix = v ddx , v cm = 1000 v, transient magnitude = 800 v refresh rate f r 1.1 mbps 1 |cm| is the maximum common-mode voltage slew ra te that can be sustained while maintaining v o > 0.8 v dd . the common-mode voltage slew rates apply to both rising and falling common-mode voltage edges.
data sheet adum3210/adum3211 rev. e | page 9 of 20 electrical characteristicsmixed 5 v/3 v, 125c operation all typical specifications are at t a = 25c, v dd1 = 5 v, v dd2 = 3.0 v. minimum/maximum specifications apply over the entire recommended operation range: 4.5 v v dd1 5.5 v, 3.0 v v dd2 3.6 v, and ?40c t a +125c, unless otherwise noted. switching specifications are tested with c l = 15 pf and cmos signal levels, unless otherwise noted. table 19. a grade b grade and t grade c grade parameter symbol min typ max min typ max min typ max unit test conditions switching specifications data rate 1 10 25 mbps within pwd limit propagation delay t phl , t plh 15 55 15 55 15 55 ns 50% input to 50% output pulse width distortion pwd 5 3 3 ns |t plh ? t phl | change vs. temperature 6 5 5 ps/c pulse width pw 1000 100 40 ns within pwd limit propagation delay skew t psk 29 22 22 ns between any two units channel matching codirectional t pskcd 5 3 3 ns opposing-direction t pskod 29 20 20 ns output rise/fall time t r /t f 3.0 3.0 3.0 ns 10% to 90% table 20. 1 mbpsa grade, b grade, and c grade 10 mbpsb grade, c grade, and t grade 25 mbpsc grade parameter symbol min typ max min typ max min typ max unit test conditions supply current adum3210 i dd1 1.3 1.7 3.5 4.6 6.6 9.0 ma i dd2 0.7 1.0 1.1 1.7 2.4 3.0 ma adum3211 i dd1 1.1 1.5 2.6 3.4 5.3 7.5 ma i dd2 0.8 1.6 1.9 2.4 3.5 5.0 ma table 21. for all models parameter symbol min typ max unit test conditions dc specifications logic high input threshold v ih 0.7 v ddx v logic low input threshold v il 0.3 v ddx v logic high output voltages v oh v ddx ? 0.1 v ddx v i ox = ?20 a, v ix = v ixh v ddx ? 0.5 v ddx ? 0.2 v i ox = ?4 ma, v ix = v ixh logic low output voltages v ol 0.0 0.1 v i ox = 20 a, v ix = v ixl 0.2 0.4 v i ox = 4 ma, v ix = v ixl input current per channel i i ?10 +0.01 +10 a 0 v v ix v ddx supply current per channel quiescent input supply current i ddi(q) 0.4 0.8 ma quiescent output supply current i ddo(q) 0.3 0.5 ma dynamic input supply current i ddi(d) 0.19 ma/mbps dynamic output supply current i ddo(d) 0.03 ma/mbps ac specifications common-mode transient immunity 1 |cm| 25 35 kv/s v ix = v ddx , v cm = 1000 v, transient magnitude = 800 v refresh rate f r 1.2 mbps 1 |cm| is the maximum common-mode voltage slew ra te that can be sustained while maintaining v o > 0.8 v dd . the common-mode voltage slew rates apply to both rising and falling common-mode voltage edges.
adum3210/adum3211 data sheet rev. e | page 10 of 20 electrical characteristicsmixed 3 v/5 v, 125c operation all typical specifications are at t a = 25c, v dd1 = 3 v, v dd2 = 5.0 v. minimum/maximum specifications apply over the entire recommended operation range: 3.0 v v dd1 3.6 v, 4.5 v v dd2 5.5 v, and ?40c t a +125c, unless otherwise noted. switching specifications are tested with c l = 15 pf and cmos signal levels, unless otherwise noted. table 22. a grade b grade and t grade c grade parameter symbol min typ max min typ max min typ max unit test conditions switching specifications data rate 1 10 25 mbps within pwd limit propagation delay t phl , t plh 15 55 15 55 15 55 ns 50% input to 50% output pulse width distortion pwd 6 4 4 ns |t plh ? t phl | change vs. temperature 6 5 5 ps/c pulse width pw 1000 100 40 ns within pwd limit propagation delay skew t psk 29 22 22 ns between any two units channel matching codirectional t pskcd 15 3 3 ns opposing-direction t pskod 29 20 20 ns output rise/fall time t r /t f 2.5 2.5 2.5 ns 10% to 90% table 23. 1 mbpsa grade, b grade, and c grade 10 mbpsb grade, c grade, and t grade 25 mbpsc grade parameter symbol min typ max min typ max min typ max unit test conditions supply current adum3210 i dd1 0.8 1.3 2.0 3.2 3.9 5.5 ma i dd2 1.0 1.6 1.7 2.8 3.7 4.5 ma adum3211 i dd1 0.7 1.3 1.5 2.1 3.1 4.5 ma i dd2 1.3 1.8 3.1 4.0 5.9 8.0 ma table 24. for all models parameter symbol min typ max unit test conditions dc specifications logic high input threshold v ih 0.7 v ddx v logic low input threshold v il 0.3 v ddx v logic high output voltages v oh v ddx ? 0.1 v ddx v i ox = ?20 a, v ix = v ixh v ddx ? 0.5 v ddx ? 0.2 v i ox = ?4 ma, v ix = v ixh logic low output voltages v ol 0.0 0.1 v i ox = 20 a, v ix = v ixl 0.2 0.4 v i ox = 4 ma, v ix = v ixl input current per channel i i ?10 +0.01 +10 a 0 v v ix v ddx supply current per channel quiescent input supply current i ddi(q) 0.4 0.8 ma quiescent output supply current i ddo(q) 0.5 0.8 ma dynamic input supply current i ddi(d) 0.10 ma/mbps dynamic output supply current i ddo(d) 0.05 ma/mbps ac specifications common-mode transient immunity 1 |cm| 25 35 kv/s v ix = v ddx , v cm = 1000 v, transient magnitude = 800 v refresh rate f r 1.1 mbps 1 |cm| is the maximum common-mode voltage slew ra te that can be sustained while maintaining v o > 0.8 v dd . the common-mode voltage slew rates apply to both rising and falling common-mode voltage edges.
data sheet adum3210/adum3211 rev. e | page 11 of 20 package characteristics table 25. parameter symbol min typ max unit test conditions resistance (input-to-output) 1 r i-o 10 12 capacitance (input-to-output) 1 c i-o 1.0 pf f = 1 mhz input capacitance c i 4.0 pf ic junction-to-case thermal resistance, side 1 jci 46 c/w thermocouple located at center of package underside ic junction-to-case thermal resistance, side 2 jco 41 c/w 1 the device is considered a 2-terminal device; pin 1 through pin 4 are shorted together, and pin 5 through pin 8 are shorted to gether. regulatory information the adum3210/adum3211 are approved by the organizations listed in table 26 . table 26. ul csa vde recognized under ul 1577 component recognition program 1 approved under csa component acceptance notice #5a certified according to din v vde v 0884-10 (vde v 0884-10): 2006-12 2 single/basic 2500 v rms isolation voltage basic insulation per csa 60950-1-03 and iec 60950-1, 400 v rms (566 v peak) maximum working voltage reinforced insulation, 560 v peak functional insulation per csa 60950-1-03 and iec 60950-1, 800 v rms(1131 v peak) maximum working voltage file e214100 file 205078 file 2471900-4880-0001 1 in accordance with ul 1577, each adum3210/ad um3211 is proof tested by appl ying an insulation test voltage 3000 v rms for 1 s econd (current leakage detection limit = 5 a). 2 in accordance with din v vde v 0884-10, ea ch adum3210/adum3211 is proof te sted by applying an insulation te st voltage 1050 v peak for 1 seco nd (partial discharge detection limit = 5 pc). an asterisk (*) marking on the component de signates din v vde v 0884-10 approval. insulation and safety-related specifications table 27. parameter symbol value unit conditions rated dielectric insulation voltage 2500 v rms 1-minute duration minimum external air gap (clearance) l(i01) 4.90 min mm measured from input terminals to output terminals, shortest distance through air minimum external tracking (creepage) l(i02) 4.01 min mm measured from input terminals to output terminals, shortest distance path along body minimum internal gap (internal clearance) 0.017 min mm insulation distance through insulation tracking resistance (comparative tracking index) cti >175 v din iec 112/vde 0303 part 1 isolation group iiia material group (din vde 0110, 1/89, table 1)
adum3210/adum3211 data sheet rev. e | page 12 of 20 din v vde v 0884-10 (vde v 0884-10) insulation characteristics these isolators are suitable for reinforced isolation only within the safety limit data. maintenance of the safety data is ensu red by protective circuits. the asterisk (*) marking on the package denotes din v vde v 0884-10 approval for a 560 v peak working volt age. table 28. description conditions symbol characteristic unit installation classification per din vde 0110 for rated mains voltage 150 v rms i to iv for rated mains voltage 300 v rms i to iii for rated mains voltage 400 v rms i to ii climatic classification 40/105/21 pollution degree per din vde 0110, table 1 2 maximum working insulation voltage v iorm 560 v peak input-to-output test voltage, method b1 v iorm 1.875 = v pr , 100% production test, t m = 1 sec, partial discharge < 5 pc v pr 1050 v peak input-to-output test voltage, method a v iorm 1.6 = v pr , t m = 60 sec, partial discharge < 5 pc v pr after environmental tests subgroup 1 896 v peak after input and/or safety test subgroup 2 and subgroup 3 v iorm 1.2 = v pr , t m = 60 sec, partial discharge < 5 pc 672 v peak highest allowable overvoltage transient overvoltage, t tr = 10 sec v tr 4000 v peak safety-limiting values maximum value allowed in the event of a failure (see figure 3) case temperature t s 150 c side 1 current i s1 160 ma side 2 current i s2 170 ma insulation resistance at t s v io = 500 v r s >10 9 case temperature (c) safety-limiting current (ma) 0 0 200 180 100 80 60 40 20 50 100 150 200 side #1 side #2 120 140 160 06866-002 figure 3. thermal derating curve, dependence of safety-limiting values on case temperature per din v vde v 0884-10 recommended operat ing conditions table 29. parameter symbol rating operating temperature t a adum3210a/adum3211a ?40c to +105c adum3210b/adum3211b ?40c to +105c adum3210t/adum3211t ?40c to +125c adum3210wa/adum3211wa ?40c to +125c adum3210wb/adum3211wb ?40c to +125c adum3210wc/adum3211wc ?40c to +125c supply voltages 1 v dd1 , v dd2 adum3210a/adum3211a 2.7 v to 5.5 v adum3210b/adum3211b 2.7 v to 5.5 v adum3210t/adum3211t 3 v to 5.5 v adum3210wa/adum3211wa 3 v to 5.5 v adum3210wb/adum3211wb 3 v to 5.5 v adum3210wc/adum3211wc 3 v to 5.5 v maximum input signal rise and fall times 1 ms 1 all voltages are relative to their respective ground. see the dc correctness and magnetic field immunity section fo r information on immu nity to external magnetic fields.
data sheet adum3210/adum3211 rev. e | page 13 of 20 absolute maximum ratings ambient temperature = 25c, unless otherwise noted. table 30. parameter symbol rating storage temperature t st ?55c to +150c ambient operating temperature t a ?40c to +125c supply voltages 1 v dd1 , v dd2 ?0.5 v to +7.0 v input voltage 1, 2 v ia , v ib ?0.5 v to v ddi + 0.5 v output voltage 1, 2 v oa , v ob ?0.5 v to v ddo + 0.5 v average output current per pin 3 i o ?22 ma to +22 ma common-mode transients 4 cm h , cm l ?100 kv/s to +100 kv/s 1 all voltages are relative to their respective ground. 2 v ddi and v ddo refer to the supply voltages on the input and output sides of a given channel, respectively. 3 see figure 3 for information on maximum a llowable current for various temperatures. 4 refers to common-mode transients across the insulation barrier. common- mode transients exceeding the ab solute maximum rating can cause latch-up or permanent damage. stresses above those listed under absolute maximum ratings may cause permanent damage to the device. this is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. table 31. maximum continuous working voltage 1 parameter max unit constraint ac voltage, bipolar waveform 565 v peak 50-year minimum lifetime ac voltage, unipolar waveform functional insulation 1131 v peak maximum approved working voltage per iec 60950-1 basic insulation 560 v peak maximum approved working voltage per iec 60950-1 and vde v 0884-10 dc voltage functional insulation 1131 v peak maximum approved working voltage per iec 60950-1 basic insulation 560 v peak maximum approved working voltage per iec 60950-1 and vde v 0884-10 1 refers to continuous voltage magnitu de imposed across the isolation barrier. see the insulation lifetime for more details. esd caution
adum3210/adum3211 data sheet rev. e | page 14 of 20 pin configurations and function descriptions 06866-003 v dd1 1 v ia 2 v ib 3 gnd 1 4 v dd2 8 v oa 7 v ob 6 gnd 2 5 adum3210 top view (not to scale) figure 4. adum3210 pin configuration 06866-016 v dd1 1 v oa 2 v ib 3 gnd 1 4 v dd2 8 v ia 7 v ob 6 gnd 2 5 adum3211 top view (not to scale) figure 5. adum3211 pin configuration table 32. adum3210 pin function descriptions pin no. mnemonic description 1 v dd1 supply voltage for isolator side 1, 2.7 v to 5.5 v. 2 v ia logic input a. 3 v ib logic input b. 4 gnd 1 ground 1. ground reference for isolator side 1. 5 gnd 2 ground 2. ground reference for isolator side 2. 6 v ob logic output b. 7 v oa logic output a. 8 v dd2 supply voltage for isolator side 2, 2.7 v to 5.5 v. table 33. adum3211 pin function descriptions pin no. mnemonic description 1 v dd1 supply voltage for isolator side 1, 2.7 v to 5.5 v. 2 v oa logic output a. 3 v ib logic input b. 4 gnd 1 ground 1. ground reference for isolator side 1. 5 gnd 2 ground 2. ground reference for isolator side 2. 6 v ob logic output b. 7 v ia logic input a. 8 v dd2 supply voltage for isolator side 2, 2.7 v to 5.5 v. truth tables table 34. adum3210 truth table (positive logic) v ia input 1 v ib input 1 v dd1 state v dd2 state v oa output 1 v ob output 1 notes h h powered powered h h l l powered powered l l h l powered powered h l l h powered powered l h x x unpowered powered l l outputs return to the input state within 1 s of v ddi power restoration x x powered unpowered indeterminate indeterminate outputs return to the input state within 1 s of v ddo power restoration 1 h refers to a high logic, and l refers to a low logic. table 35. adum3211 truth table (positive logic) v ia input 1 v ib input 1 v dd1 state v dd2 state v oa output 1 v ob output 1 notes h h powered powered h h l l powered powered l l h l powered powered h l l h powered powered l h x x unpowered powered indeterminate l outputs return to the input state within 1 s of v ddi power restoration x x powered unpowered l indeterminate outputs return to the input state within 1 s of v ddo power restoration 1 h refers to a high logic, l refers to a low logic, and x refers to high or low logic, dont care.
data sheet adum3210/adum3211 rev. e | page 15 of 20 typical performance characteristics data rate (mbps) current/channel (ma) 0 0 6 2 8 10 10 20 30 5v 3v 4 0 6866-004 figure 6. typical input supply current per channel vs. data rate for 5 v and 3 v operation data rate (mbps) current/channel (ma) 0 0 3 2 1 4 10 20 30 5v 3v 0 6866-005 figure 7. typical output su pply current per channel vs. data rate for 5 v and 3 v operation (no output load) data rate (mbps) current/channel (ma) 0 0 3 2 1 4 10 20 30 5v 3v 06866-006 figure 8. typical output supply current per channel vs. data rate for 5 v and 3 v operation (15 pf output load) data rate (mbps) current (ma) 0 0 15 10 5 20 10 20 30 5v 3v 06866-007 figure 9. adum3210 typical i dd1 supply current vs. data rate for 5 v and 3 v operation data rate (mbps) current (ma) 0 0 3 2 1 4 10 20 30 5v 3v 06866-008 figure 10. adum3210 typical i dd2 supply current vs. data rate for 5 v and 3 v operation data rate (mbps) current (ma) 0 0 6 2 8 10 10 20 30 5v 3v 4 06866--015 figure 11. adum3211 typical i dd1 or i dd2 supply current vs. data rate for 5 v and 3 v operation
adum3210/adum3211 data sheet rev. e | page 16 of 20 applications information pc board layout the adum3210 / adum3211 digital isolators require no external interface circuitry for the logic interfaces. power supply bypassing is strongly recommended at the input and output supply pins. the capacitor value should be between 0.01 f and 0.1 f. the total lead length between both ends of the capacitor and the input power supply pin should not exceed 20 mm. system-level esd considerations and enhancements system-level esd reliability (for example, per iec 61000-4-x) is highly dependent on system design, which varies widely by application. the adum3210/ adum3211 incorporate many enhancements to make esd reliability less dependent on system design. the enhancements include: ? esd protection cells were added to all input/output interfaces. ? key metal trace resistances reduced using wider geometry and paralleling of lines with vias. ? the scr effect inherent in cmos devices is minimized by use of a guarding and isolation technique between the pmos and nmos devices. ? areas of high electric field concentration are eliminated using 45 corners on metal traces. ? supply pin overvoltage is prevented with larger esd clamps between each supply pin and its respective ground. while the adum3210 / adum3211 improve system-level esd reliability, they are no substitute for a robust system-level design. for detailed recommendations on board layout and system-level design, see the an-793 application note, esd/latch-up considerations with i coupler isolation products . propagation delay-related parameters propagation delay is a parameter that describes the time it takes a logic signal to propagate through a component. the propagation delay to a logic low output can differ from the propagation delay to a logic high output. input ( v ix ) output (v ox ) t plh t phl 50% 50% 06866-009 figure 12. propagation delay parameters pulse width distortion is the maximum difference between these two propagation delay values and is an indication of how accurately the input signal timing is preserved. channel-to-channel matching refers to the maximum amount that the propagation delay differs between channels within a single adum3210 / adum3211 component. propagation delay skew refers to the maximum amount that the propagation delay differs between multiple adum3210/ adum3211 components operating under the same conditions. dc correctness and magnetic field immunity positive and negative logic transitions at the isolator input cause narrow (~1 ns) pulses to be sent to the decoder via the transformer. the decoder is bistable and is, therefore, either set or reset by the pulses, indicating input logic transitions. in the absence of logic transitions of more than 2 s at the input, a periodic set of refresh pulses indicative of the correct input state are sent to ensure dc correctness at the output. if the decoder receives no internal pulses for more than approximately 5 s, the input side is assumed to be unpowered or nonfunctional, in which case, the isolator output is forced to a default state (see table 3 4 and table 35 ) by the watchdog timer circuit. the adum3210 / adum3211 are immune to external magnetic fields. the limitation on the adum3210/ adum3211 magnetic field immunity is set by the condition in which induced voltage in the transformer receiving coil is sufficiently large to either falsely set or reset the decoder. the following analysis defines the conditions under which this can occur. the 3 v operating condition of the adum3210/ adum3211 is examined because it represents the most susceptible mode of operation. the pulses at the transformer output have an amplitude greater than 1.0 v. the decoder has a sensing threshold at about 0.5 v, therefore establishing a 0.5 v margin in which induced voltages can be tolerated. the voltage induced across the receiving coil is given by v = (?d/ dt ) ? r n 2 , n = 1, 2, ... , n where: is the magnetic flux density (gauss). n is the number of turns in the receiving coil. r n is the radius of the nth turn in the receiving coil (cm). given the geometry of the receiving coil in the adum3210/ adum3211 and an imposed requirement that the induced voltage is at most 50% of the 0.5 v margin at the decoder, a maximum allowable magnetic field is calculated as shown in figure 13 . magnetic field frequency (hz) 100 maximum allowable magnetic flux density (kgauss) 0.001 1m 10 0.01 1k 10k 10m 0.1 1 100m 100k 06866-010 figure 13. maximum allowable external magnetic flux density
data sheet adum3210/adum3211 rev. e | page 17 of 20 for example, at a magnetic field frequency of 1 mhz, the maximum allowable magnetic field of 0.2 kgauss induces a voltage of 0.25 v at the receiving coil. this is about 50% of the sensing threshold and does not cause a faulty output transition. similarly, if such an event were to occur during a transmitted pulse (and had the worst-case polarity), it would reduce the received pulse from >1.0 v to 0.75 v, which is still well above the 0.5 v sensing threshold of the decoder. the preceding magnetic flux density values correspond to specific current magnitudes at given distances away from the adum3210/ adum3211 transformers. figure 14 expresses these allowable current magnitudes as a function of frequency for selected distances. as shown, the adum3210 / adum3211 are immune and can be affected only by extremely large currents operated at a high frequency and very close to the component. for the 1 mhz example, a 0.5 ka current would have to be placed 5 mm away from the adum3210 / adum3211 to affect the operation of the component. magnetic field frequency (hz) maximum allowable current (ka) 1000 100 10 1 0.1 0.01 1k 10k 100m 100k 1m 10m distance = 5mm distance = 1m distance = 100mm 06866-011 figure 14. maximum allowable current for various current-to-adum3210/-adum3211 spacings note that at combinations of strong magnetic fields and high frequencies, any loops formed by the printed circuit board (pcb) traces may induce sufficiently large error voltages to trigger the threshold of succeeding circuitry. care should be taken in the layout of such traces to avoid this possibility. power consumption the supply current at a given channel of the adum3210 / adum3211 isolator is a function of the supply voltage, channel data rate, and channel output load. for each input channel, the supply current is given by i ddi = i ddi ( q ) f 0.5 f r i ddi = i ddi ( d ) (2 f C f r ) + i ddi (q) f > 0.5 f r for each output channel, the supply current is given by i ddo = i ddo ( q ) f 0.5 f r i ddo = ( i ddo ( d ) + (0.5 10 ?3 ) c l v ddo ) (2 f C f r ) + i ddo ( q ) f > 0.5 f r where: i ddi (d) , i ddo (d) are the input and output dynamic supply currents per channel (ma/mbps). i ddi (q) , i ddo (q) are the specified input and output quiescent supply currents (ma). c l is the output load capacitance (pf). v ddo is the output supply voltage (v). f is the input logic signal frequency (mhz, half of the input data rate, nrz signaling). f r is the input stage refresh rate (mbps). to calculate the total i dd1 and i dd2 supply current, the supply currents for each input and output channel corresponding to i dd1 and i dd2 are calculated and totaled. figure 6 provides the input supply currents per channel as a function of data rate. figure 7 and figure 8 provide the output supply currents per channel as a function of data rate for an unloaded output condition and for a 15 pf output condition, respectively. figure 9 through figure 11 provide total i dd1 and i dd2 supply current as a function of data rate for the adum3210 and adum3211 channel configurations.
adum3210/adum3211 data sheet rev. e | page 18 of 20 insulation lifetime in the case of unipolar ac or dc voltage, the stress on the insulation is significantly lower. this allows operation at higher working voltages while still achieving a 50-year service life. the working voltages listed in table 31 can be applied while maintaining the 50-year minimum lifetime provided that the voltage conforms to either the unipolar ac or dc voltage cases. any cross-insulation voltage waveform that does not conform to figure 16 or figure 17 should be treated as a bipolar ac waveform, and its peak voltage should be limited to the 50-year lifetime voltage value listed in table 31 . all insulation structures eventually break down when subjected to voltage stress over a sufficiently long period. the rate of insulation degradation is dependent on the characteristics of the voltage waveform applied across the insulation. in addition to the testing performed by the regulatory agencies, analog devices carries out an extensive set of evaluations to determine the lifetime of the insulation structure within the adum3210/ adum3211. analog devices performs accelerated life testing using voltage levels higher than the rated continuous working voltage. acceleration factors for several operating conditions are determined. these factors allow calculation of the time to failure at the actual working voltage. note that the voltage presented in figure 16 is shown as sinusoidal for illustration purposes only. it is meant to represent any voltage waveform varying between 0 v and some limiting value. the limiting value can be positive or negative, but the voltage cannot cross 0 v. the values shown in table 31 summarize the peak voltage for 50 years of service life for a bipolar ac operating condition and the maximum csa/vde approved working voltages. in many cases, the approved working voltage is higher than the 50-year service life voltage. operation at these high working voltages can lead to shortened insulation life in some cases. 0v rated peak voltage 06866-012 figure 15. bipolar ac waveform the insulation lifetime of the adum3210/ adum3211 depends on the voltage waveform type imposed across the isolation barrier. the i coupler insulation structure degrades at different rates depending on whether the waveform is bipolar ac, unipolar ac, or dc. figure 15 , figure 16 , and figure 17 illustrate these different isolation voltage waveforms. 0v rated peak voltage 06866-013 figure 16. unipolar ac waveform a bipolar ac voltage environment is the most stringent. the goal of a 50-year operating lifetime under the ac bipolar condition determines the analog devices recommended maximum working voltage. 0v rated peak voltage 06866-014 figure 17. dc waveform
data sheet adum3210/adum3211 rev. e | page 19 of 20 outline dimensions controlling dimensions are in millimeters; inch dimensions (in parentheses) are rounded-off millimeter equivalents for reference only and are not appropriate for use in design. compliant to jedec standards ms-012-aa 012407-a 0.25 (0.0098) 0.17 (0.0067) 1.27 (0.0500) 0.40 (0.0157) 0.50 (0.0196) 0.25 (0.0099) 45 8 0 1.75 (0.0688) 1.35 (0.0532) seating plane 0.25 (0.0098) 0.10 (0.0040) 4 1 85 5.00 (0.1968) 4.80 (0.1890) 4.00 (0.1574) 3.80 (0.1497) 1.27 (0.0500) bsc 6.20 (0.2441) 5.80 (0.2284) 0.51 (0.0201) 0.31 (0.0122) coplanarity 0.10 figure 18. 8-lead standard small outline package [soic_n] narrow body (r-8) dimensions shown in millimeters and (inches)
adum3210/adum3211 data sheet rev. e | page 20 of 20 ordering guide model 1 , 2 number of inputs, v dd1 side number of inputs, v dd2 side maximum data rate (mbps) maximum propagation delay, 5 v (ns) maximum pulse width distortion (ns) temperature range package option 3 adum3210arz 2 0 1 50 5 ?40c to +105c r-8 adum3210arz-rl7 2 0 1 50 5 ?40c to +105c r-8 adum3210brz 2 0 10 50 3 ?40c to +105c r-8 adum3210brz-rl7 2 0 10 50 3 ?40c to +105c r-8 adum3210trz 2 0 10 50 3 ?40c to +125c r-8 adum3210trz-rl7 2 0 10 50 3 ?40c to +125c r-8 adum3210warz 2 0 1 50 5 ?40c to +125c r-8 adum3210warz-rl7 2 0 1 50 5 ?40c to +125c r-8 adum3210wbrz 2 0 10 50 3 ?40c to +125c r-8 adum3210wbrz-rl7 2 0 10 50 3 ?40c to +125c r-8 adum3210wcrz 2 0 25 50 3 ?40c to +125c r-8 ADUM3210WCRZ-RL7 2 0 25 50 3 ?40c to +125c r-8 adum3211arz 1 1 1 50 6 ?40c to +105c r-8 adum3211arz-rl7 1 1 1 50 6 ?40c to +105c r-8 adum3211brz 1 1 10 50 4 ?40c to +105c r-8 adum3211brz-rl7 1 1 10 50 4 ?40c to +105c r-8 adum3211trz 1 1 10 50 4 ?40c to +125c r-8 adum3211trz-rl7 1 1 10 50 4 ?40c to +125c r-8 adum3211warz 1 1 1 50 6 ?40c to +125c r-8 adum3211warz-rl7 1 1 1 50 6 ?40c to +125c r-8 adum3211wbrz 1 1 10 50 4 ?40c to +125c r-8 adum3211wbrz-rl7 1 1 10 50 4 ?40c to +125c r-8 adum3211wcrz 1 1 25 50 4 ?40c to +125c r-8 adum3211wcrz-rl7 1 1 25 50 4 ?40c to +125c r-8 1 z = rohs compliant part. 2 w = qualified for auto motive application. 3 r-8 = 8-lead, narrow body soic_n. automotive products the adum3210w/adum3211w models are available with controlled manufacturing to support the quality and reliability requirements of automotive applications. note that these automotive models may have specifications that differ from the commercial models; t herefore, designers should review the specifications section of this data sheet carefully. only the automotive grade products shown are available for use in automotive applications. contact your local analog devices account representative for specific product ordering informat ion and to obtain the specific automotive reliability reports for these models. ?2007C2011 analog devices, inc. all rights reserved. trademarks and registered trademarks are the property of their respective owners. d06866-0-11/11(e)

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